[1] Hongquan Zhao*, Yuhui Yang, Chunxiang Wang, Dahua Zhou, Xuan Shi*, Yuzhi Li, Yuliang Mao, Fast and Broadband Photoresponse of a Few-Layer GeSe Field-Effect Transistor with Direct Band Gaps, ACS Applied Materials & Interfaces, 2019, 11, 41, 38031-38038. 

[2] X. Shi*, H. Yuan, X. Mao, Y. Ma, and H. Q. Zhao, Robust quantum state transfer inspired by Dzyaloshinskii-Moriya interactions, Physical Review A，2017, 95, 052332. 

[3] X. Shi，L. F. Wei，C. H. Oh，Quantum computation with surface-state electrons by rapid population passages，Science China Physics, Mechanics & Astronomy，2014，57（9）：1718-1724. 

[4] X. Shi，M. Zhang，L. F. Wei，Quantum computation with moving quantum dots generated by surface acoustic waves，Physical Review A，2011，84（6）：062310-062317. 

[5] X. Shi， L. F. Wei，High-efficiency single-photon Fock state production by transitionless quantum driving，Laser Physics Letters，2015，12（1）：015204-015208. 

[6] H.-Q. Zhao, X. Mao, D. Zhou, Sh.-L Feng, X. Shi, Y. Ma, X.-Zh Wei and Y.-L. Mao, Bandgap modulation of MoS2 monolayer by thermal annealing and quick cooling, Nanoscale, 2016, 8, 18995-19003. 

[7] Hongquan Zhao, Yuliang Mao, Xin Mao, Xuan Shi, Congshen Xu, Chunxiang Wang, Shangmin Zhang, Dahua Zhou，Band Structure and Photoelectric Characterization of GeSe Monolayers, Advanced Functional Materials, 2018, 28(6), 1704855. 

[8] Yuzhi Li, Xuan Shi, Fangbo Dai, Dahua Zhou, Minghui Jin, Hongying Zheng,Yuhui Yang, Hongquan Zhao and Junzhong Wang, Enhancement of photodetection by PbSe quantum dots on atomic-layered GeS devices, J. Phys. D: Appl. Phys., 2020, 53, 505102.